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 1 www.fairchildsemi.com ?2007 Fairchild Semiconductor Corporation FFPF08H60S R ev. C1 FFPF08H60S — Hyperfast II Diode FFPF08H60S 8 A, 600 V, Hyperfast II Diode Features ? Hyperfast Recovery trr = 45 n s (@ IF = 8 A) ? Max Forward Voltage, VF = 2.6 V (@ T C = 25°C) ? 600 V Reverse Voltage and High Reliability ? Avalanche Energy Rated Applications ? General Purpose ? Switching Mode Power Supply ? Free-Wheeling Diode for Motor Application ? Power Switching Circuits The FFPF08H60S is a hyperfast II diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Pin Assignments Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics TC = 25°C unless otherwise noted Package Marking and Ordering Information 1. Cathode 2. Anode TO-220F-2L 1 1. Cathode 2. Anode 2 Symbol Parameter Ratings Unit VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current @ TC = 105 °C8A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 60 A TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C Symbol Parameter Max. Unit RθJC Maximum Thermal Resistance, Junction to Case 3.4 °C/W ? RoHS Compliant Description Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFPF08H60STU FFPF08H60S TO-220F-2L Tube N/A N/A 60 November 2013 |